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Start Over Year 2022 Committee Member Albert Segall Keyword Reliability

1. Reliability Studies in Silicon Carbide and Silicon Power MOSFETs

open_access
Open Access
Author:
Ghosh, Amartya
Title:
Reliability Studies in Silicon Carbide and Silicon Power MOSFETs
Graduate Program:
Engineering Science and Mechanics (PHD)
Keywords:
Wide Band Gap
SiC
Reliability
Device Physics
Interface Traps
Border Traps
File:
Download Final-Revised.pdf
Committee Members:
Samia Suliman, Major Field Member
Jian hsu, Major Field Member
Osama Awadelkarim, Chair & Dissertation Advisor
Jifa Hao, Special Member
Albert Segall, Program Head/Chair
Rongming Chu, Outside Unit & Field Member

2. Applications of Electrically Detected Magnetic Resonance to the Analysis of Technologically Relevant Reliability Mechanisms in Semiconductor Devices

open_access
Open Access
Author:
Sharov, Fedor
Title:
Applications of Electrically Detected Magnetic Resonance to the Analysis of Technologically Relevant Reliability Mechanisms in Semiconductor Devices
Graduate Program:
Engineering Science and Mechanics (PHD)
Keywords:
Electrically Detected Magnetic Resonance
Near-Zero-Field Magnetoresistance
Reliability
Metal-Oxide-Semiconductors
Field Effect Transistors
Time Dependent Dielectric Breakdown
Gamma Irradiation
Total Ionizing Dose
Silicon Dioxide
Silicon Carbide
Rapid Scan
Interface Defects
File:
Download Thesis_FVS_Final_jcm6606_2.pdf
Committee Members:
Albert Segall, Program Head/Chair
Sahin Ozdemir, Major Field Member
Suzanne Mohney, Outside Unit & Field Member
Patrick Lenahan, Chair & Dissertation Advisor
Saptarshi Das, Major Field Member