Applications of Electrically Detected Magnetic Resonance to the Analysis of Technologically Relevant Reliability Mechanisms in Semiconductor Devices
Open Access
- Author:
- Sharov, Fedor
- Graduate Program:
- Engineering Science and Mechanics
- Degree:
- Doctor of Philosophy
- Document Type:
- Dissertation
- Date of Defense:
- October 24, 2022
- Committee Members:
- Albert Segall, Program Head/Chair
Sahin Ozdemir, Major Field Member
Suzanne Mohney, Outside Unit & Field Member
Patrick Lenahan, Chair & Dissertation Advisor
Saptarshi Das, Major Field Member - Keywords:
- Electrically Detected Magnetic Resonance
Near-Zero-Field Magnetoresistance
Reliability
Metal-Oxide-Semiconductors
Field Effect Transistors
Time Dependent Dielectric Breakdown
Gamma Irradiation
Total Ionizing Dose
Silicon Dioxide
Silicon Carbide
Rapid Scan
Interface Defects - Abstract:
- Electrically detected magnetic resonance (EDMR) is an extraordinarily sensitive spectroscopy technique that can provide information about the chemical nature of electrically relevant trap sites in micro- and nano-scale device structures. Atomic-scale defects within these devices result in a degradation in electrical performance, and if generated in a large enough amount, can lead to device failure. This makes EDMR a premier tool for analyzing the identities of certain defects involved in failure and degradation in small-scale devices. In this thesis work, I present data on how EDMR can be used to analyze the formation of defect centers due to reliability issues such as irradiation damage and timedependent dielectric breakdown. These results show the utility of EDMR to distinguish the processes and build-up of various defects between different mechanisms. Additionally, I apply another analytical chemical method used in conventional EPR to EDMR known as rapid-scan as a method of improving the acquisition times of EDMR for industrial application. Rapid-scan involves the continuous averaging of high frequency linear magnetic field scans that improve signal-to-noise due its superior elimination of 1/𝑓 noise and utilization of beneficial adiabatic effects through the rapidpassage of resonant phenomena. While the engineering of said experimental apparatus is significantly more involved in comparison to conventional techniques, the spectrometer itself is much simpler to use. In the work herein, I present my analysis of the benefits of electrically detected rapid-scan (EDRS) as an industrial tool to analyze semiconductor device structures.