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1. On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs

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Author:: Follman, Jacob Jay
Title:: On the atomic scale defects involved in the negative bias temperature instability in 4H-SiC MOSFETs
Graduate Program:: Materials Science and Engineering
Keywords:: NBTI
SiC
MOSFET
EPR
EDMR
File:: Download Follman_J_MS_Thesis.pdf
Committee Members:: Patrick M Lenahan, Thesis Advisor/Co-Advisor