1. Reliability Studies in Silicon Carbide and Silicon Power MOSFETs Open Access Author: Ghosh, Amartya Title: Reliability Studies in Silicon Carbide and Silicon Power MOSFETs Graduate Program: Engineering Science and Mechanics Keywords: Wide Band GapSiCReliabilityDevice PhysicsInterface TrapsBorder Traps File: Download Final-Revised.pdf Committee Members: Samia Suliman, Major Field MemberJian hsu, Major Field MemberOsama Awadelkarim, Chair & Dissertation AdvisorJifa Hao, Special MemberAlbert Segall, Program Head/ChairRongming Chu, Outside Unit & Field Member