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Start Over Committee Member Mark William Horn Keyword ohmic contact Keyword InGaSb Keyword Schottky barrier height Keyword InGaSb Author Last Name Wang

1. DESIGN OF SHALLOW AND THERMALLY STABLE CONTACTS ON ANTIMONIDE-BASED SEMICONDUCTORS

open_access
Open Access
Author:
Wang, Hsiao-an Sammy
Title:
DESIGN OF SHALLOW AND THERMALLY STABLE CONTACTS ON ANTIMONIDE-BASED SEMICONDUCTORS
Graduate Program:
Materials Science and Engineering
Keywords:
metal/semiconductor contact
ohmic contact
Schottky barrier height
gate metallization
shallow reaction
thermal stability
aging
wet processing
surface passivation
antimonide based compound semiconductors
InGaSb
InAs
AlGaAsSb
HBT
HEMT
I-V characteristics
cross-sectional TEM
File:
Download Thesis.pdf
Committee Members:
Suzanne E Mohney, Committee Chair/Co-Chair
Mark William Horn, Committee Member
Theresa Stellwag Mayer, Committee Member
Joan Marie Redwing, Committee Member
James Patrick Runt, Committee Member