Search

Start Over Graduate Program Materials Science and Engineering Year 2007 Committee Member Mark William Horn Keyword EPITAXY

1. IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE

open_access
Open Access
Author:
Acord, Jeremy Daniel
Title:
IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE
Graduate Program:
Materials Science and Engineering
Keywords:
METAL ORGANIC CHEMICAL VAPOR DEPOSITION
III-V NITRIDES
STRESS MEASUREMENT
EPITAXY
File:
Download JD_Acord_Ph._D._Thesis_August_2007.pdf
Committee Members:
Joan Marie Redwing, Committee Chair/Co-Chair
Elizabeth C Dickey, Committee Member
Christopher L Muhlstein, Committee Member
Mark William Horn, Committee Member

Limit your search