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- Author:
- Fanton, Mark
- Title:
- Growth of single crystal silicon carbide by halide chemical vapor deposition
- Graduate Program:
- Materials Science and Engineering
- Keywords:
- chemical vapor deposition
silicon carbide
epitaxy
- File:
- Download Fanton_Thesis_Final.pdf
- Committee Members:
- Joan Marie Redwing, Committee Chair/Co-Chair
Joseph R Flemish, Committee Member
Suzanne E Mohney, Committee Member
Thomas R Shrout, Committee Member