1. Non-volatile Ferroelectric Transistor based Memory Design: Device-Circuit Analysis Considering Gate Leakage Open Access Author: Thirumala, Sandeep Krishna Title: Non-volatile Ferroelectric Transistor based Memory Design: Device-Circuit Analysis Considering Gate Leakage Graduate Program: Electrical Engineering Keywords: Ferroelectric TransistorsGate LeakageFEFET MemoriesPolarizationRetention File: Download Masters_Thesis_Sandeep_Thirumala_Submitted.pdf Committee Members: Sumeet Kumar Gupta, Thesis Advisor/Co-AdvisorMehdi Kiani, Committee Member