1. Physics and Technology of Strained Germanium Quantum Well FinFET for Low Power P-channel Application Open Access Author: Agrawal, Ashish Title: Physics and Technology of Strained Germanium Quantum Well FinFET for Low Power P-channel Application Graduate Program: Electrical Engineering Keywords: SemiconductorGermaniumFinFETCMOS File: Download Ashish-Dissertation.pdf Committee Members: Suman Datta, Dissertation Advisor/Co-AdvisorSuzanne E Mohney, Committee MemberRoman Engel Herbert, Committee MemberJerzy Ruzyllo, Committee Member
2. COMPLIMENTARY III-V HETERO-JUNCTION TUNNEL TRANSISTORS FOR ENERGY EFFICIENT NANOELECTRONICS Open Access Author: Pandey, Rahul Title: COMPLIMENTARY III-V HETERO-JUNCTION TUNNEL TRANSISTORS FOR ENERGY EFFICIENT NANOELECTRONICS Graduate Program: Electrical Engineering Keywords: TunnelTunnel TransistorEnergyPowerEfficientLow-powerEnergy efficientlow voltageTFETMOSFETCMOSMoore's lawTransistoron-currentsteepsubthresholdswitchingsub-thermallogiccircuitssystemsmemorysemiconductorsTunnelFETcomplimentaryIII-Vcompound semiconductorsGermaniumGeSnHetero-junctionstunnel barrier engineeringquantum mechanical tunneling File: Download Energy_Efficient_Tunnel_Transistors_by_Rahul_Pandey.pdf Committee Members: Suman Datta, Dissertation Advisor/Co-AdvisorVijaykrishnan Narayanan, Committee Chair/Co-ChairJerzy Ruzyllo, Committee MemberSumeet Gupta, Committee MemberRoman Engel-Herbert, Outside Member
