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Author:: Abraham, Michael
Title:: ENGINEERING OHMIC CONTACTS TO III-V, III-N AND 2D DICHALCOGENIDES: THE IMPACT OF ANNEALING AND SURFACE PREPARATION ON CONTACT RESISTANCE
Graduate Program:: Materials Science and Engineering
Keywords:: MoS2
GaN
InGaAs
Ohmic contacts
surface preparation
annealing
alloyed
silver
TiAl
Ni
silicide
self-aligned
MoS2 FETs
intercalation
Nickel
Titanium Aluminum
GaN HEMTs
File:: Download PhD_Dissertation_170507_MAbraham.pdf
Committee Members:: Suzanne E. Mohney, Dissertation Advisor/Co-Advisor
Suzanne E. Mohney, Committee Chair/Co-Chair
S. Ashok, Committee Member
Joan Redwing, Committee Member
Roman Engel-Herbert, Outside Member

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