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Start Over Committee Member S. Ashok Keyword Ni Keyword self-aligned Keyword Nickel Keyword GaN Keyword InGaAs

1. ENGINEERING OHMIC CONTACTS TO III-V, III-N AND 2D DICHALCOGENIDES: THE IMPACT OF ANNEALING AND SURFACE PREPARATION ON CONTACT RESISTANCE

open_access
Open Access
Author:
Abraham, Michael
Title:
ENGINEERING OHMIC CONTACTS TO III-V, III-N AND 2D DICHALCOGENIDES: THE IMPACT OF ANNEALING AND SURFACE PREPARATION ON CONTACT RESISTANCE
Graduate Program:
Materials Science and Engineering
Keywords:
MoS2
GaN
InGaAs
Ohmic contacts
surface preparation
annealing
alloyed
silver
TiAl
Ni
silicide
self-aligned
MoS2 FETs
intercalation
Nickel
Titanium Aluminum
GaN HEMTs
File:
Download PhD_Dissertation_170507_MAbraham.pdf
Committee Members:
Suzanne E. Mohney, Dissertation Advisor/Co-Advisor
Suzanne E. Mohney, Committee Chair/Co-Chair
S. Ashok, Committee Member
Joan Redwing, Committee Member
Roman Engel-Herbert, Outside Member