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Start Over Committee Member Joan Redwing Keyword GaN Keyword Ni Keyword silicide Keyword Titanium Aluminum Keyword annealing Keyword annealing Keyword InGaAs Keyword intercalation Keyword Ohmic contacts Keyword alloyed

1. ENGINEERING OHMIC CONTACTS TO III-V, III-N AND 2D DICHALCOGENIDES: THE IMPACT OF ANNEALING AND SURFACE PREPARATION ON CONTACT RESISTANCE

open_access
Open Access
Author:
Abraham, Michael
Title:
ENGINEERING OHMIC CONTACTS TO III-V, III-N AND 2D DICHALCOGENIDES: THE IMPACT OF ANNEALING AND SURFACE PREPARATION ON CONTACT RESISTANCE
Graduate Program:
Materials Science and Engineering
Keywords:
MoS2
GaN
InGaAs
Ohmic contacts
surface preparation
annealing
alloyed
silver
TiAl
Ni
silicide
self-aligned
MoS2 FETs
intercalation
Nickel
Titanium Aluminum
GaN HEMTs
File:
Download PhD_Dissertation_170507_MAbraham.pdf
Committee Members:
Suzanne E. Mohney, Dissertation Advisor/Co-Advisor
Suzanne E. Mohney, Committee Chair/Co-Chair
S. Ashok, Committee Member
Joan Redwing, Committee Member
Roman Engel-Herbert, Outside Member

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