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Start Over Graduate Program Materials Science and Engineering Committee Member Joan Marie Redwing Keyword chemical vapor deposition Keyword silicon carbide Keyword chemical vapor deposition Keyword epitaxy

1. Growth of single crystal silicon carbide by halide chemical vapor deposition

open_access
Open Access
Author:
Fanton, Mark
Title:
Growth of single crystal silicon carbide by halide chemical vapor deposition
Graduate Program:
Materials Science and Engineering
Keywords:
chemical vapor deposition
silicon carbide
epitaxy
File:
Download Fanton_Thesis_Final.pdf
Committee Members:
Joan Marie Redwing, Committee Chair/Co-Chair
Joseph R Flemish, Committee Member
Suzanne E Mohney, Committee Member
Thomas R Shrout, Committee Member

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