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Start Over Graduate Program Materials Science and Engineering Committee Member Joan Marie Redwing Committee Member Suzanne E Mohney Keyword chemical vapor deposition Keyword epitaxy Keyword silicon carbide

1. Growth of single crystal silicon carbide by halide chemical vapor deposition

open_access
Open Access
Author:
Fanton, Mark
Title:
Growth of single crystal silicon carbide by halide chemical vapor deposition
Graduate Program:
Materials Science and Engineering
Keywords:
chemical vapor deposition
silicon carbide
epitaxy
File:
Download Fanton_Thesis_Final.pdf
Committee Members:
Joan Marie Redwing, Committee Chair/Co-Chair
Joseph R Flemish, Committee Member
Suzanne E Mohney, Committee Member
Thomas R Shrout, Committee Member

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