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Start Over Committee Member Joan Marie Redwing Committee Member Mark William Horn Keyword HEMT Author Last Name Wang

1. DESIGN OF SHALLOW AND THERMALLY STABLE CONTACTS ON ANTIMONIDE-BASED SEMICONDUCTORS

open_access
Open Access
Author:
Wang, Hsiao-an Sammy
Title:
DESIGN OF SHALLOW AND THERMALLY STABLE CONTACTS ON ANTIMONIDE-BASED SEMICONDUCTORS
Graduate Program:
Materials Science and Engineering
Keywords:
metal/semiconductor contact
ohmic contact
Schottky barrier height
gate metallization
shallow reaction
thermal stability
aging
wet processing
surface passivation
antimonide based compound semiconductors
InGaSb
InAs
AlGaAsSb
HBT
HEMT
I-V characteristics
cross-sectional TEM
File:
Download Thesis.pdf
Committee Members:
Suzanne E Mohney, Committee Chair/Co-Chair
Mark William Horn, Committee Member
Theresa Stellwag Mayer, Committee Member
Joan Marie Redwing, Committee Member
James Patrick Runt, Committee Member