An analysis of a two-terminal Alpha-Indium Selenide-based Ferroelectric Device

open_access
Open Access
Author:
Buddharaju, Akshay Varma
Graduate Program:
Electrical Engineering
Degree:
Master of Science
Document Type:
Master Thesis
Date of Defense:
June 17, 2026
Committee Members:
Ning Li, Thesis Advisor/Co-Advisor
Tom Jackson, Committee Member
John Doherty, Professor in Charge/Director of Graduate Studies
Keywords:
Two-Dimensional Materials
Ferroelectrics
Memory Devices
Abstract:
Modern microelectronics seeks to miniaturize transistors, adhering to Moore’s Law to achieve higher integration density. Initially, performance gains were accomplished through MOSFET miniaturization, as described by Dennard’s Scaling. Subsequently, advancements included improvements in channel mobility and the introduction of high-k dielectrics. FinFETs and, more recently, GAAFETs have been implemented to address short-channel effects. The computing requirements for data-intensive workloads cannot be met by logic device optimization in isolation due to limitations imposed by the von Neumann architecture. This led to the development of High Bandwidth Memory (HBM) to alleviate the memory wall problem by increasing memory bandwidth and supporting the growing demands of AI workloads. This thesis reviews the need to move beyond HBM towards emerging non-volatile memories and specifically ferroelectric memory devices. The motivation for their adoption and industrial relevance is discussed, leading to the study of alpha-Indium Selenide, a 2D ferroelectric. The thesis then presents the steps involved in flake characterization, dry transfer process, and fabrication of a two-terminal device. Lastly, the basic I−V characteristics are presented, and a qualitative band diagram is used to explain the physical origin of the memory window.