Observation of Paramagnetic Recombination Centers in 4H-SiC pin Diodes via Electrically Detected Magnetic Resonance
Open Access
Author:
Purcell, Ashton
Graduate Program:
Engineering Science and Mechanics
Degree:
Master of Science
Document Type:
Master Thesis
Date of Defense:
March 16, 2023
Committee Members:
Patrick M Lenahan, Thesis Advisor/Co-Advisor Saptarshi Das, Committee Member Albert Segall, Program Head/Chair Sahin K Ozdemir, Committee Member
Keywords:
electron paramagnetic resonance electrically detected magnetic resonance 4H-SiC wide-bandgap semiconductors paramagnetic defects point defects semiconductor devices pin diodes
Abstract:
The 4H-SiC polytype is arguably the most technologically relevant due to its relatively large band-gap which give rise to its preferred application in high-power and high-temperature applications. One such application is their incorporation into pin diodes, which are used for high-power radio-frequency and microwave applications. However, little is known about the role of electrically-active defect centers in 4H-SiC pin diodes. In this work, I present an electrically detected magnetic resonance (EDMR) investigation into the physical and chemical identity of defect centers in 4H-SiC pin diodes. The EDMR spectra consisted of several overlapping defect centers whose relative amplitude vary with bias and doping concentration. These indicated the presence of multiple recombination centers with different energy levels in the 4H-SiC bandgap. Identification attempts were made by comparing experimental data with literature values. The identification of these centers and their role on pin diode device performance are crucial in improving their performance and utility.
