Surface functionalization of oxides for biosensing applications
Open Access
Author:
Liddell, Kristi Lynn
Graduate Program:
Chemistry
Degree:
Doctor of Philosophy
Document Type:
Dissertation
Date of Defense:
February 21, 2014
Committee Members:
Christine Dolan Keating, Dissertation Advisor/Co-Advisor Christine Dolan Keating, Committee Chair/Co-Chair Thomas E Mallouk, Committee Member Mary Elizabeth Williams, Committee Member Jun Zhu, Special Member
Keywords:
dielectric surface functionalization FET surface regeneration
Abstract:
Functionalization of oxide materials plays a critical role in the development of electronic-based biosensors, such as field effect transistors (FETs). A dielectric coating (insulator) on the electrically-active surfaces isolates electronic components from the sensing medium and serves as the immobilization surface for bioreceptors. This dissertation examined several strategies to functionalize the standard gate dielectric, SiO2, and emerging high-k materials, Al2O3 and HfO2. As such, understanding functionalization on alumina and hafnium oxide is of interest as this has been extensively studied on silica but is less understood with other materials.
Biosensor technology has evolved tremendously in recent years to enable devices that are sensitive, selective, portable, and easy to use. The introduction of new materials and surface modifications into modern electronics will enable diversification in an already exciting field.
