Development of the Analytic Capabilities of Near-Zero Field Magnetoresistance Spectroscopy Through Experiment and Modeling of the Stochastic Quantum Liouville Equation
Open Access
- Author:
- Frantz, Elias B
- Graduate Program:
- Materials Science and Engineering
- Degree:
- Doctor of Philosophy
- Document Type:
- Dissertation
- Date of Defense:
- December 06, 2021
- Committee Members:
- Venkatraman Gopalan, Outside Unit & Field Member
Sahin Ozdemir, Major Field Member
Patrick Lenahan, Chair & Dissertation Advisor
Saptarshi Das, Major Field Member
Arthur H. Edwards, Special Member
John Mauro, Program Head/Chair - Keywords:
- Electron Paramagnetic Resonance
EPR
Electrically Detected Magnetic Resonance
EDMR
Near-Zero Field Magnetoresistance
NZFMR
Spin Transport
Spin Transport Modeling
Stochastic Quantum Liouville Equation
Quantum Liouville Equation
Open Quantum Systems - Abstract:
- The primary object of this research is to further develop the technique of near-zero field magnetoresistance (NZFMR) as a spectroscopy technique that approaches the capability of conventional electron paramagnetic resonance (EPR) and electrically detected magnetic resonance (EDMR) in determining the structure and chemistry of performance limiting atomic-scale defects in semiconductor devices and semiconductor materials and insulators. Although the ultimate analytical power of the NZFMR technique may never fully match that of the more conventional resonance techniques, it offers a simplicity in the measurement apparatus which could greatly decrease the cost of its implementation in comparison to EPR and EDMR. This work provides a comprehensive overview of both the qualitative and quantitative models built from the stochastic quantum Liouville equation to describe and model spin-dependent transport in both EDMR and NZFMR measurements providing the explicit theoretical connection between the defects observed in EDMR and NZFMR measurements. This work also demonstrates the experimental utility of NZFMR technique with results from studies of isotopic dilution and forming gas anneals on Si/SiO2 metal-insulator-semiconductor capacitors. These results show the explicit, experimental connection between the defects observed in EDMR and NZFMR. Lastly, this work presents a method by which to analyze and interpret NZFMR results and then extends that same method to analyze and further interpret EDMR results. Thus, this work also merges the theory and experiment by demonstrating the explicit connection between the defects observed with the EDMR measurement, the NZFMR measurement, and both the qualitative and quantitative theory that describes their responses.