Detection of Defects in Silicon Carbide PIN Diodes via Electrically Detected Magnetic Resonance
Open Access
Author:
Barker, William
Graduate Program:
Engineering Science and Mechanics
Degree:
Master of Science
Document Type:
Master Thesis
Date of Defense:
November 10, 2020
Committee Members:
Patrick M Lenahan, Thesis Advisor/Co-Advisor Judith Todd Copley, Program Head/Chair Mark William Horn, Committee Member Michael T Lanagan, Committee Member
Keywords:
Silicon Carbide Electrically Detected Magnetic Resonance PIN Diodes EDMR EPR Electron Paramagnetic Resonance SiC
Abstract:
Silicon carbide PIN diodes were investigated via X-band electrically detected magnetic resonance spectroscopy. The devices were studied under two different modulation frequencies, 12,500 Hz and 100 Hz. A g map of these results shows an anisotropic g for the centerline. Both the side features found in the 100 Hz data set and the spectra detected suggest that the dominating spin-dependent defect is similar to nitrogen-related defects in previous silicon carbide electrically detected magnetic resonance and electron paramagnetic resonance investigations. The defect or defects present likely involve an intrinsic paramagnetic center and almost certainly also involves a deep level impurity center, but the exact nature of the defect or defects requires further investigation. The 100 Hz data reveals side peaks not present in the higher modulation frequency measurements. This fundamentally different frequency response of the two EDMR spectra suggests a complex EDMR response. One possible explanation is that charge carriers tunnel to shallow, near-interface oxide defects near the edges of the diode before tunneling back. This is supported by the idea that one spin-dependent process is slower than spin dependent recombination.
