RAPID SILICON CARBIDE CRYSTAL GROWTH WITH HIGH POWER LASER HEATING METHOD
Open Access
Author:
ZHOU, HAONAN
Graduate Program:
Electrical Engineering
Degree:
Master of Science
Document Type:
Master Thesis
Date of Defense:
April 27, 2017
Committee Members:
Shizhuo Yin, Thesis Advisor/Co-Advisor Weihua Guan, Committee Member
Keywords:
High power laser silicon carbide
Abstract:
This research presents an ultra-fast procedure to grow silicon carbide crystal with the size up to 50 μm from Nano size powder. By using high power laser beam in vacuum environment, the silicon carbide nanometer powder will be heated to an extremely high temperature in few seconds. The laser beam will be held for several minutes and then cooling down slowly. The silicon carbide powder will grow to micro size crystal in minutes. This research examines the silicon carbide structure before and after the laser beam heating. The composition of the final product is determined by SEM, EDS and XRD. The type of main product and the growing direction is characterized and the growing process presents in two steps. For comparison, different percentages of power and heating methods applied for laser beam.
