SB-BASED MATERIALS FOR BEYOND SI FIELD EFFECT TRANSISTOR DEVICES

Open Access
Author:
Barth, Michael Judson
Graduate Program:
Electrical Engineering
Degree:
Doctor of Philosophy
Document Type:
Dissertation
Date of Defense:
June 27, 2016
Committee Members:
  • Suman Datta , Dissertation Advisor
  • Jerzy Ruzyllo, Committee Chair
  • Sumeet Kumar Gupta, Committee Member
  • Suman Datta, Committee Member
  • Roman Engel-Herbert, Outside Member
Keywords:
  • InAsSb
  • GaSb
  • InGaSb
  • Soft Error
  • Heavy Ion
  • Atomic Layer Deposition
Abstract:
Antimonide based (Sb) compound semiconductors owing to their superior electron and hole transport properties over Si are an attractive option as a channel replacement material for the future generation of devices. Of the Sb materials p-channel InGaSb and n-channel InAsSb quantum wells (QWs) are particularly interesting due to their enhanced mobilities over silicon and their similar lattice constants. The similar lattice constants allows for a p and n channel all Sb-based alternative to Si CMOS technology to be grown on a common buffer layer. This integration advantages offered by a common buffer layer makes Sb-based devices applicable for use in future low power high-speed digital and millimeter wave applications. Important when evaluating any new technology is understanding its reliability. Radiation effects are important part of device reliability. Complex digital systems can be brought down by a vulnerability in one of its smallest subcomponents. For example an ionizing particle strikes a transistor or memory cell, the particle strike results in the generation of electron and hole pairs which can result the shift of critical transistor performance metrics such as threshold voltage (VT), or the corruption of a stored bit in the memory cell. This dissertation addresses the fabrication and integration challenges that were overcome to realize Sb-based QW-MOSFETs. Further this work investigates the radiation effects in p-channel InGaSb and n-channel InAsSb quantum well metal-oxide-semiconductor field effect transistors (QW-MOSFETs). Both p-channel InGaSb and n-channel InAsSb QW-MOSFETs are assessed for resilience to total ionizing dose (TID) effects and single event effects (SEE). A statistical analysis is presented to study the radiation induced effects. TCAD and SPICE simulations are utilized to detail the mechanisms behind the radiation induced effects, and assess their impact on circuit level implementations of Sb-based QW-MOSFETs.