VANADIUM-TRANSITION METAL OXIDE ALLOY THIN FILMS FOR MICROBOLOMETER APPLICATIONS
Open Access
Author:
Ozcelik, Adem
Graduate Program:
Materials Science and Engineering
Degree:
Master of Science
Document Type:
Master Thesis
Date of Defense:
None
Committee Members:
David Lawrence Allara, Thesis Advisor/Co-Advisor David Lawrence Allara, Thesis Advisor/Co-Advisor
Keywords:
ALD co-sputtering sputtering thin films Vanadium oxide microbolometer Atomic Layer Deposition VTIP Alloying of vanadium oxide
Abstract:
In this thesis, transition metal oxides were added in vanadium oxide films for microbolometer applications by co-sputtering. Vanadium and transition metals were sputtered with pulsed DC and RF power, respectively. Concentration of the metals in VOX films were determined by XPS and RBS techniques. Electrical and structural properties of the resulted films were analyzed with TCR, resistivity, TEM, Raman and GIXRD measurements. In general, TCR and resistivity values for alloying less than 10% were found to be similar to non alloyed films. Crystallinity of the films was found to be increased by addition of transition metal oxides. This study of alloying VOX films revealed that even with concentrations between 17-30 % transition metal oxides, VOX films grow with the same structural property which is a two phase system of nanocrystalline FCC domains surrounded by an amorphous matrix.
ALD process with VTIP and H2O precursors was tried to produce VOX films. TCR and resistivity values for the resulted film were found to be -4.7%/K and 77 kOhm-cm, respectively. Mass per cycle data was collected using in-situ QCM, and layer by layer growth was observed. Growth per cycle for VTIP precursor for the conditions used in this thesis was found to be 0.32 Å/cycle.