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1. Ohmic contacts to compound semiconductor transistors

open_access
Open Access
Author:
Dormaier, Robert A
Title:
Ohmic contacts to compound semiconductor transistors
Graduate Program:
Materials Science and Engineering
Keywords:
high electron mobility transistor
heterojunction bipolar transistor
surface preparation
indium arsenide
Indium gallium arsenide
Ohmic contacts
antimonide based compound semiconductor
File:
Download R_Dormaier_Dissertation_final.pdf
Committee Members:
Suzanne E Mohney, Dissertation Advisor/Co-Advisor
Suzanne E Mohney, Committee Chair/Co-Chair
Joan Marie Redwing, Committee Member
Patrick M Lenahan, Committee Member
Michael T Lanagan, Committee Member

2. ENGINEERING OHMIC CONTACTS TO III-V, III-N AND 2D DICHALCOGENIDES: THE IMPACT OF ANNEALING AND SURFACE PREPARATION ON CONTACT RESISTANCE

open_access
Open Access
Author:
Abraham, Michael
Title:
ENGINEERING OHMIC CONTACTS TO III-V, III-N AND 2D DICHALCOGENIDES: THE IMPACT OF ANNEALING AND SURFACE PREPARATION ON CONTACT RESISTANCE
Graduate Program:
Materials Science and Engineering
Keywords:
MoS2
GaN
InGaAs
Ohmic contacts
surface preparation
annealing
alloyed
silver
TiAl
Ni
silicide
self-aligned
MoS2 FETs
intercalation
Nickel
Titanium Aluminum
GaN HEMTs
File:
Download PhD_Dissertation_170507_MAbraham.pdf
Committee Members:
Suzanne E. Mohney, Dissertation Advisor/Co-Advisor
Suzanne E. Mohney, Committee Chair/Co-Chair
S. Ashok, Committee Member
Joan Redwing, Committee Member
Roman Engel-Herbert, Outside Member