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1. DESIGN OF SHALLOW AND THERMALLY STABLE CONTACTS ON ANTIMONIDE-BASED SEMICONDUCTORS

open_access
Open Access
Author:
Wang, Hsiao-an Sammy
Title:
DESIGN OF SHALLOW AND THERMALLY STABLE CONTACTS ON ANTIMONIDE-BASED SEMICONDUCTORS
Graduate Program:
Materials Science and Engineering
Keywords:
metal/semiconductor contact
ohmic contact
Schottky barrier height
gate metallization
shallow reaction
thermal stability
aging
wet processing
surface passivation
antimonide based compound semiconductors
InGaSb
InAs
AlGaAsSb
HBT
HEMT
I-V characteristics
cross-sectional TEM
File:
Download Thesis.pdf
Committee Members:
Suzanne E Mohney, Committee Chair/Co-Chair
Mark William Horn, Committee Member
Theresa Stellwag Mayer, Committee Member
Joan Marie Redwing, Committee Member
James Patrick Runt, Committee Member

2. Semiconductor Surface Passivation and Metallization for Schottky Diodes

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Restricted (Penn State Only)
Author:
Molina, Alex
Title:
Semiconductor Surface Passivation and Metallization for Schottky Diodes
Graduate Program:
Materials Science and Engineering
Keywords:
Schottky diodes
contacts
transition metals
semiconductor structures
gallium nitride
rhenium
molybdenum carbonitride
atomic layer deposition
energy dispersive x-ray spectroscopy
transmission electron microscopy
x-ray diffraction
hydrobromic acid
x-ray photoelectron spectroscopy
electron beam evaporation
sputtering
surface passivation
metallization
File:
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Committee Members:
Michael Lanagan, Outside Unit & Field Member
Rongming Chu, Outside Field Member
Jon-Paul Maria, Major Field Member
Suzanne Mohney, Chair & Dissertation Advisor
John Mauro, Program Head/Chair