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Author:

Wang, Hsiao-an Sammy

Title:

DESIGN OF SHALLOW AND THERMALLY STABLE CONTACTS ON ANTIMONIDE-BASED SEMICONDUCTORS

Graduate Program:

Materials Science and Engineering

Keywords:

metal/semiconductor contact
ohmic contact
Schottky barrier height
gate metallization
shallow reaction
thermal stability
aging
wet processing
surface passivation
antimonide based compound semiconductors
InGaSb
InAs
AlGaAsSb
HBT
HEMT
I-V characteristics
cross-sectional TEM

File:

Download Thesis.pdf

Committee Members:

Suzanne E Mohney, Committee Chair/Co-Chair
Mark William Horn, Committee Member
Theresa Stellwag Mayer, Committee Member
Joan Marie Redwing, Committee Member
James Patrick Runt, Committee Member