1. Effects of Low-Mobility Holes in TCAD Simulated GaN/AlGaN/GaN Super-Heterojunction HEMT for RF and High-Power Applications Open Access Author: Kemmerling, Jesse Title: Effects of Low-Mobility Holes in TCAD Simulated GaN/AlGaN/GaN Super-Heterojunction HEMT for RF and High-Power Applications Graduate Program: Electrical Engineering Keywords: gallium nitrideHEMTsuper-heterojunctionfield plateRF amplifierhole mobilityTCADmicrowave amplifier File: Download Thesis_MS_Final_Draft_Kemmerling_Jesse.pdf Committee Members: Rongming Chu, Thesis Advisor/Co-AdvisorTom Jackson, Committee MemberKultegin Aydin, Program Head/Chair