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Author:

Fanton, Mark

Title:

Growth of single crystal silicon carbide by halide chemical vapor deposition

Graduate Program:

Materials Science and Engineering

Keywords:

chemical vapor deposition
silicon carbide
epitaxy

File:

Download Fanton_Thesis_Final.pdf

Committee Members:

Joan Marie Redwing, Committee Chair/Co-Chair
Joseph R Flemish, Committee Member
Suzanne E Mohney, Committee Member
Thomas R Shrout, Committee Member