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Author:

Dormaier, Robert A

Title:

Ohmic contacts to compound semiconductor transistors

Graduate Program:

Materials Science and Engineering

Keywords:

high electron mobility transistor
heterojunction bipolar transistor
surface preparation
indium arsenide
Indium gallium arsenide
Ohmic contacts
antimonide based compound semiconductor

File:

Download R_Dormaier_Dissertation_final.pdf

Committee Members:

Suzanne E Mohney, Dissertation Advisor/Co-Advisor
Suzanne E Mohney, Committee Chair/Co-Chair
Joan Marie Redwing, Committee Member
Patrick M Lenahan, Committee Member
Michael T Lanagan, Committee Member