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1. Effects of Low-Mobility Holes in TCAD Simulated GaN/AlGaN/GaN Super-Heterojunction HEMT for RF and High-Power Applications

open_access
Open Access
Author:
Kemmerling, Jesse
Title:
Effects of Low-Mobility Holes in TCAD Simulated GaN/AlGaN/GaN Super-Heterojunction HEMT for RF and High-Power Applications
Graduate Program:
Electrical Engineering
Keywords:
gallium nitride
HEMT
super-heterojunction
field plate
RF amplifier
hole mobility
TCAD
microwave amplifier
File:
Download Thesis_MS_Final_Draft_Kemmerling_Jesse.pdf
Committee Members:
Rongming Chu, Thesis Advisor/Co-Advisor
Tom Jackson, Committee Member
Kultegin Aydin, Program Head/Chair

2. The Development of Gallium Nitride Super-Heterojunction Transistors for 10-kV Blocking and 3-kV Switching

open_access
Open Access
Author:
Kemmerling, Jesse
Title:
The Development of Gallium Nitride Super-Heterojunction Transistors for 10-kV Blocking and 3-kV Switching
Graduate Program:
Electrical Engineering
Keywords:
GaN
wide-bandgap
high voltage switch
MOSFET
HEMT
semiconductor switch
breakdown voltage
current collapse
on-resistance
transistor
super-heterojunction
superjunction
dynamic performance
electric field distribution
charge balance
charge balance technique
Schottky barrier diodes
dynamic on-resistance
gallium nitride
III-V semiconductor
semiconductor fabrication
TCAD
simulation
2DEG
AlGaN/GaN
high electron mobility transistors
metal-oxide-semiconductor field-effect transistors
SHJ
capacitance
field-plate
p-n junction
fast-switching
10-kV
3-kV switching
3-kV
analytical model
derivation
Ron-BV relationship
File:
Download Dissertation_Kemmerling_GaN_SHJ_Transistors_10kV_11052024.pdf
Committee Members:
Tom Jackson, Major Field Member
Rongming Chu, Chair & Dissertation Advisor
Suzanne Mohney, Major Field Member
Joshua Robinson, Outside Unit & Field Member
Madhavan Swaminathan, Program Head/Chair

3. Gallium nitride super-heterojunction device design and single event effect response

restricted_to_institution
Restricted (Penn State Only)
Author:
Song, Jianan
Title:
Gallium nitride super-heterojunction device design and single event effect response
Graduate Program:
Electrical Engineering
Keywords:
GaN
Superjunction
Radiation
TCAD
Single event effect
Dielectric
File:
Login to Download
Committee Members:
Madhavan Swaminathan, Program Head/Chair
Michael Lanagan, Outside Unit & Field Member
Tom Jackson, Major Field Member
Rongming Chu, Chair & Dissertation Advisor
Mehdi Kiani, Major Field Member
Suzanne Mohney, Major Field Member