1. Effects of Low-Mobility Holes in TCAD Simulated GaN/AlGaN/GaN Super-Heterojunction HEMT for RF and High-Power Applications Open Access Author: Kemmerling, Jesse Title: Effects of Low-Mobility Holes in TCAD Simulated GaN/AlGaN/GaN Super-Heterojunction HEMT for RF and High-Power Applications Graduate Program: Electrical Engineering Keywords: gallium nitrideHEMTsuper-heterojunctionfield plateRF amplifierhole mobilityTCADmicrowave amplifier File: Download Thesis_MS_Final_Draft_Kemmerling_Jesse.pdf Committee Members: Rongming Chu, Thesis Advisor/Co-AdvisorTom Jackson, Committee MemberKultegin Aydin, Program Head/Chair
2. The Development of Gallium Nitride Super-Heterojunction Transistors for 10-kV Blocking and 3-kV Switching Open Access Author: Kemmerling, Jesse Title: The Development of Gallium Nitride Super-Heterojunction Transistors for 10-kV Blocking and 3-kV Switching Graduate Program: Electrical Engineering Keywords: GaNwide-bandgaphigh voltage switchMOSFETHEMTsemiconductor switchbreakdown voltagecurrent collapseon-resistancetransistorsuper-heterojunctionsuperjunctiondynamic performanceelectric field distributioncharge balancecharge balance techniqueSchottky barrier diodesdynamic on-resistancegallium nitrideIII-V semiconductorsemiconductor fabricationTCADsimulation2DEGAlGaN/GaNhigh electron mobility transistorsmetal-oxide-semiconductor field-effect transistorsSHJcapacitancefield-platep-n junctionfast-switching10-kV3-kV switching3-kVanalytical modelderivationRon-BV relationship File: Download Dissertation_Kemmerling_GaN_SHJ_Transistors_10kV_11052024.pdf Committee Members: Tom Jackson, Major Field MemberRongming Chu, Chair & Dissertation AdvisorSuzanne Mohney, Major Field MemberJoshua Robinson, Outside Unit & Field MemberMadhavan Swaminathan, Program Head/Chair
