1. Device modeling, analysis and fabrication of In0.53Ga0.47As Field-effect transistors Open Access Author: Hwang, Euichul Title: Device modeling, analysis and fabrication of In0.53Ga0.47As Field-effect transistors Graduate Program: Electrical Engineering Keywords: InGaAs FinFETBallistic transportInjection velocityInGaAs QWFETSolid phase regrowthContact File: Download PhD_Thesis_Euichul__final.pdf Committee Members: Suman Datta, Dissertation Advisor/Co-AdvisorSuman Datta, Committee Chair/Co-ChairSuzanne E Mohney, Committee MemberJerzy Ruzyllo, Committee MemberTheresa Stellwag Mayer, Committee MemberPatrick M Lenahan, Special Member
