1. MOCVD growth of GaN on Si through novel substrate modification techniques Open Access Author: Gagnon, Jarod Christopher Title: MOCVD growth of GaN on Si through novel substrate modification techniques Graduate Program: Materials Science and Engineering Keywords: III/NitrideMOCVDSiliconsubstrate modification File: Download Gagnon_--_Thesis_Final.pdf Committee Members: Joan Marie Redwing, Dissertation Advisor/Co-AdvisorSuzanne E Mohney, Committee MemberJoshua Alexander Robinson, Committee MemberJerzy Ruzyllo, Committee Member
