1. IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE Open Access Author: Acord, Jeremy Daniel Title: IN SITU STRESS MEASUREMENTS DURING MOCVD GROWTH OF ALUMINUM GALLIUM NITRIDE ON SILICON CARBIDE Graduate Program: Materials Science and Engineering Keywords: METAL ORGANIC CHEMICAL VAPOR DEPOSITIONIII-V NITRIDESSTRESS MEASUREMENTEPITAXY File: Download JD_Acord_Ph._D._Thesis_August_2007.pdf Committee Members: Joan Marie Redwing, Committee Chair/Co-ChairElizabeth C Dickey, Committee MemberChristopher L Muhlstein, Committee MemberMark William Horn, Committee Member
