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Author:

Thirumala, Sandeep Krishna

Title:

Non-volatile Ferroelectric Transistor based Memory Design: Device-Circuit Analysis Considering Gate Leakage

Graduate Program:

Electrical Engineering

Keywords:

Ferroelectric Transistors
Gate Leakage
FEFET Memories
Polarization
Retention

File:

Download Masters_Thesis_Sandeep_Thirumala_Submitted.pdf

Committee Members:

Sumeet Kumar Gupta, Thesis Advisor/Co-Advisor
Mehdi Kiani, Committee Member