1. Magnetoelectric Flexural Gate Transistors with Nanotesla Sensitivity Open Access Author: Li, Feng Title: Magnetoelectric Flexural Gate Transistors with Nanotesla Sensitivity Graduate Program: Electrical Engineering Keywords: MagnetoelectricMagnetic SensorsMagnetostrictionThin film Metglas，Magnetic Flux ConcentrationFlicker NoiseReadout Circuit File: Download PhD_Dissertation_Feng_Li.pdf Committee Members: Suman Datta, Dissertation Advisor/Co-AdvisorQiming Zhang, Committee Chair/Co-ChairSrinivas A Tadigadapa, Committee MemberYuan Xie, Special Member
